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Univ.-Prof. Dr. Hermann Adrian

Institut für Physik, Johannes Gutenberg-Universität Mainz

Staudinger Weg 7, Raum: 2 412

  • 06131/39-3637
  • 06131/39-5156
Publikationen
Ergebnisse pro Seite:  10

Schattke, A.; Jakob, Gerhard; Martinez, J. C. et al.

Investigations on the c-axis transport properties of YBa2Cu3O7-delta/PrBa2Cu3O7-delta thin film superlattices

IEEE Transactions on applied superconductivity. Bd. 7. H. 2. 1997 S. 2727 - 2729


Holiastou, M.; Psyharis, V.; Niarchos, D. et al.

Preparation and x-ray pole-figure characterization of DC-sputtered Bi-2201, Bi-2212 and Bi-2223 thin films

Superconductor science and technology. Bd. 10. 1997 S. 712 - 716


Jourdan, Martin; Huth, M.; Mouloud, S. et al.

Probing the superconducting state of UPd2Al3 thin films by tunneling spectroscopy

Physica C. Bd. 282/287. H. 3. 1997 S. 1883 - 1884


Jourdan, Martin; Huth, M.; Hessert, J. et al.

Superconducting tunneling spectroscopy on epitaxial UPd2Al3 thin films

Physica B. Bd. 230/232. 1997 S. 335 - 337


Hessert, J.; Huth, M.; Jourdan, Martin et al.

Temperature and angular dependence of the upper critical field of UPd2Al3 thin films

Physica B. Bd. 230/232. 1997 S. 373 - 376


Haibach, P.; Frey, U.; Adrian, Hermann et al.

Transversal thermovoltages of (1 1 9) Bi2Sr2CaCu2O8+δ thin films on vicinal (1 1 0) SrTiO3 substrates

Physica C. Bd. 282/287. H. 2. 1997 S. 655 - 656


Holiastou, M.; Poulakis, N.; Palles, D. et al.

XRD and micro Raman characterization of epitaxial Bi-2201, Bi-2212 and Bi-2223 thin films

Physica C. Bd. 282/287. H. 2. 1997 S. 583 - 584


Mrowka, F.; Wurlitzer, M.; Esquinazi, P. et al.

Ac field dependence of the susceptibility of Bi2Sr2CaCu2O8 thin films at low dc fields

Czechoslovak journal of physics. Bd. 46. H. 2. 1996 S. 1101 - 1102


Adrian, Hermann; Frey, U.; Meffert, H. et al.

Bi2Sr2Ca2Cu3O10 ? based Josephson junctions and SQUIDs

Czech. J. Phys. Bd. 46. 1996 S. 1289 - 1290


Li, R.; Sherman, E.; Feile, R. et al.

Charge transfer in high-Tc (Y/Pr)Ba2Cu3O7 superlattices

Physical review B. Bd. 53. H. 10. 1996 S. 6836 - 6837