Inhaltszusammenfassung

We have measured the ac field dependence of the ac susceptibility of 400 nm thick Bi2212 thin films at low dc fields 0 ??0 H a ? 1 mT in transverse geometry. We show that at reduced temperaturest?0.85 the ac field dependence can be described by the non-linear Bean model after Brandt as in Y123 thin films. Att>0.85, however, we observe a decrease of the energy dissipation and shielding capability. The critical current density at zero dc field is given byj c?4×1010(1?(T/T c))2.8±0.1 A/m2.

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Klassifikation

DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik