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Above 16% efficient sequentially grown Cu(In,Ga)(Se,S)2-based solar cells with atomic layer deposited Zn(O,S) buffers

Progress in Photovoltaics. Bd. 23. 2015 S. 1493 - 1500

Erscheinungsjahr: 2015

Publikationstyp: Zeitschriftenaufsatz (Übersichtsartikel)

Sprache: Englisch

Doi/URN: 10.1002/pip.2579

Volltext über DOI/URN

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Inhaltszusammenfassung


We report the development of Cd-free buffers by atomic layer deposition for chalcopyrite-based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)2 absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD-Zn(O,S)-buffered devices can be characterized weitereas stable...We report the development of Cd-free buffers by atomic layer deposition for chalcopyrite-based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)2 absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD-Zn(O,S)-buffered devices can be characterized weitereas stable only showing a minor drift of the open circuit voltage and the fill factor.» weiterlesen» einklappen

  • chalcopyrite
  • thin film
  • solar cell
  • atomic layer deposition
  • sequential process

Autoren


Merdes, S. (Autor)
Ziem, F. (Autor)
Lavrenko, T. (Autor)
Walter, T. (Autor)
Lauermann, I. (Autor)
Klingsporn, M. (Autor)
Schmidt, S. (Autor)
Schlatmann, R. (Autor)

Klassifikation


DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik

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