Inhaltszusammenfassung

We report the thin film preparation of CeSb by means of molecular beam epitaxy (MBE) onto sapphire (1 1 ?2 0) substrates. Above a substrate temperature of about 300°C CeSb crystallizes in (0 0 1) orientation. The growth mode of the films changes from a fiber textured to an epitaxial mode for deposition temperatures above 900°C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo temperature TK and the magnetic ordering temperature TN, are not changed...We report the thin film preparation of CeSb by means of molecular beam epitaxy (MBE) onto sapphire (1 1 ?2 0) substrates. Above a substrate temperature of about 300°C CeSb crystallizes in (0 0 1) orientation. The growth mode of the films changes from a fiber textured to an epitaxial mode for deposition temperatures above 900°C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo temperature TK and the magnetic ordering temperature TN, are not changed significantly. » weiterlesen» einklappen

Autoren

Klassifikation

DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik