Magnetotransport properties of epitaxial (1 0 0)- and (1 1 1)-oriented CeSb thin films
Physica B. Bd. 281/282. 2000 S. 447 - 448
Erscheinungsjahr: 2000
ISBN/ISSN: 0921-4526
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1016/S0921-4526(99)00850-9
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Inhaltszusammenfassung
We present the electronic magnetotransport properties of (1 0 0)- and (1 1 1)-oriented CeSb thin films. The samples were grown epitaxially by molecular beam epitaxy onto sapphire and (0 0 0 1) substrates. The temperature-dependent resistivity is in full correspondence with the behaviour known from bulk material. For (1 0 0)-oriented films the analysis of the temperature and magnetic field-dependent magnetoresistivity results in a H/T phase diagram analogous to that of bulk samples. For (1 1 ...We present the electronic magnetotransport properties of (1 0 0)- and (1 1 1)-oriented CeSb thin films. The samples were grown epitaxially by molecular beam epitaxy onto sapphire and (0 0 0 1) substrates. The temperature-dependent resistivity is in full correspondence with the behaviour known from bulk material. For (1 0 0)-oriented films the analysis of the temperature and magnetic field-dependent magnetoresistivity results in a H/T phase diagram analogous to that of bulk samples. For (1 1 1)-oriented films slight deviations were observed. In Hall-effect measurements of (1 0 0)-oriented samples a sign change of the Hall coefficient occurred which is in contrast to measurements performed on single crystals. These deviations are interpreted in terms of a skew-scattering component resulting from an incoherent background of non-saturated magnetic moments. » weiterlesen» einklappen
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Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik