Inhaltszusammenfassung

We report the epitaxial growth of (1 0 0)- and (1 1 1)-oriented CeSb thin films on Al2O3 and (0 0 0 1) substrates by means of molecular beam epitaxy. Depending on the overall Sb-to-Ce flux ratio and the molecular state of Sbx, we observe a re-entrance behavior in the phase formation and orientation of CeSb on Al2O3 . This behavior is shown to exhibit, in some respect, similarities to III?V compound growth, but also more complexities due to the instability of the rare earth component against...We report the epitaxial growth of (1 0 0)- and (1 1 1)-oriented CeSb thin films on Al2O3 and (0 0 0 1) substrates by means of molecular beam epitaxy. Depending on the overall Sb-to-Ce flux ratio and the molecular state of Sbx, we observe a re-entrance behavior in the phase formation and orientation of CeSb on Al2O3 . This behavior is shown to exhibit, in some respect, similarities to III?V compound growth, but also more complexities due to the instability of the rare earth component against oxidation. A geometric orientation selection model is suggested which reproduces the observed re-entrance behavior as well as the overall CeSb growth rate. » weiterlesen» einklappen

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Klassifikation

DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik