Epitaxy and magnetotransport of Sr2FeMoO6 thin films
Physical review B. Bd. 62. H. 2. 2000 S. R767 - R770
Erscheinungsjahr: 2000
ISBN/ISSN: 1095-3795 ; 1550-235X ; 1098-0121
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1103/PhysRevB.62.R767
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Inhaltszusammenfassung
By pulsed-laser deposition epitaxial thin films of Sr2FeMoO6 have been prepared on (100) SrTiO3 substrates. Already for a deposition temperature of 320 °C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the FeMo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determine...By pulsed-laser deposition epitaxial thin films of Sr2FeMoO6 have been prepared on (100) SrTiO3 substrates. Already for a deposition temperature of 320 °C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the FeMo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determined to 4?B per formula unit (f.u.), in agreement with the expected value for an ideal ferrimagnetic arrangement. We found at 300 K an ordinary Hall coefficient of -6.01×10-10?m3/As, corresponding to an electronlike charge-carrier density of 1.3 per FeMo pair. In the semiconducting films the magnetic moment is reduced to 1?B/f.u. due to disorder in the FeMo sublattice. In low fields an anomalous holelike contribution dominates the Hall voltage, which nearly vanishes at low temperatures for the metallic films only.» weiterlesen» einklappen
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik