Inhaltszusammenfassung

The critical temperature Tc of Mo3Ge and Mo3Si with initial low Tc ? 1.45K is drastically enhanced by lattice disorder after heavy ion irradiation at low temperatures. Mo3Ge shows an increase of Tc to 6.5K and a successive decrease to 3.5K, whereas Tc of Mo3Si increases and saturates at 7.7K. The effects on Tc, the normal state resistivity and the coefficient of the electronic specific heat are discussed. An interpretation in the framework of lifetime broadening of electronic states is consi...The critical temperature Tc of Mo3Ge and Mo3Si with initial low Tc ? 1.45K is drastically enhanced by lattice disorder after heavy ion irradiation at low temperatures. Mo3Ge shows an increase of Tc to 6.5K and a successive decrease to 3.5K, whereas Tc of Mo3Si increases and saturates at 7.7K. The effects on Tc, the normal state resistivity and the coefficient of the electronic specific heat are discussed. An interpretation in the framework of lifetime broadening of electronic states is consistent with the behaviour of high-Tc-A15 compounds after irradiation. » weiterlesen» einklappen

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Klassifikation

DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik