Superconductivity and electrical resistivity of amorphous Nb75Ge25 and Nb80Si20 after heavy ion irradiation at low temperature
Solid state communications. Bd. 36. 1980 S. 979 - 982
Erscheinungsjahr: 1980
Publikationstyp: Zeitschriftenaufsatz (Forschungsbericht)
Sprache: Englisch
Doi/URN: 10.1016/0038-1098(80)91196-5
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Inhaltszusammenfassung
Low temperature irradiation of thin films of Nb75Ge25 (Tc = 3.2 K) and Nb80Si20 (Tc = 4.7 K) with 20 MeV sulfur ions leads to an increase of Tc of about 0.5 K and a decrease of of about 1.5 to 3.5%. Annealing up to room temperature partly restores the initial values. Qualitatively the results can be explained by irradiation induced smearing of the structure factor, which is partially recovered by annealing.
Autoren
Bieger, J. (Autor)
Müller, P. (Autor)
Saemann-Ischenko, G. (Autor)
Haase, E.L. (Autor)
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik
