Superconductivity and electrical resistivity of PbMo6S8 thin films after low temperature ion irradiation
Physica B C. Bd. 107. 1981 S. 647 - 648
Erscheinungsjahr: 1981
Publikationstyp: Zeitschriftenaufsatz (Forschungsbericht)
Sprache: Englisch
Doi/URN: 10.1016/0378-4363(81)90626-4
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Inhaltszusammenfassung
Thin films of PbMo6S8 with a critical temperature of 12.7K were irradiated with 20MeV sulphur ions at temperatures below 20K. At a dose of 1014cm?2 Tc drops below 1.2K, whereas the electrical resistivity (16K) reaches four to five times its initial value. (dHc2/dT)T=Tc increases from 35kG/K to 65kG/K at very low doses. The decrease of Tc can be explained by a decrease of the density of states at the Fermi energy. The negative temperature coefficient of (T) after irradiation suggests a local v...Thin films of PbMo6S8 with a critical temperature of 12.7K were irradiated with 20MeV sulphur ions at temperatures below 20K. At a dose of 1014cm?2 Tc drops below 1.2K, whereas the electrical resistivity (16K) reaches four to five times its initial value. (dHc2/dT)T=Tc increases from 35kG/K to 65kG/K at very low doses. The decrease of Tc can be explained by a decrease of the density of states at the Fermi energy. The negative temperature coefficient of (T) after irradiation suggests a local variation of the cluster valence electron concentration due to displaced atoms. » weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik
