Effects of irradiation‐induced lattice defects on the quantum Hall effect in GaAs‐AlxGa1−xAs heterostructures
Journal of applied physics. Bd. 65. H. 9. 1989 S. 3498 - 3500
Erscheinungsjahr: 1989
ISBN/ISSN: 1089-7550 ; 0021-8979
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1063/1.342620
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Inhaltszusammenfassung
GaAs?AlxGa1?xAs heterostructures were irradiated with 6?MeV protons at low temperature to study systematically the influence of lattice disorder in two?dimensional electron systems on resistivity, mobility, carrier concentration n, and quantum Hall?effect structures. The additional irradiation?induced scattering centers lead to a linear decrease of n with the proton fluence and to a broadening of the quantum Hall plateaus, which is qualitatively explained in the framework of localization in m...GaAs?AlxGa1?xAs heterostructures were irradiated with 6?MeV protons at low temperature to study systematically the influence of lattice disorder in two?dimensional electron systems on resistivity, mobility, carrier concentration n, and quantum Hall?effect structures. The additional irradiation?induced scattering centers lead to a linear decrease of n with the proton fluence and to a broadening of the quantum Hall plateaus, which is qualitatively explained in the framework of localization in magnetic fields.» weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik
