Carrier gas‐free chemical vapor deposition technique for in situ preparation of high quality YBa2Cu3O7−δ thin films
Applied physics letters. Bd. 59. H. 7. 1991 S. 869 - 871
Erscheinungsjahr: 1991
ISBN/ISSN: 0003-6951 ; 1077-3118
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1063/1.105263
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Inhaltszusammenfassung
A new carrier gas?free metalorganic chemical vapor deposition technique was developed yielding a high deposition rate. The ??dicetonate precursor compounds were synthesized with reproducible water content which is of great importance for their vapor pressure. With the technique described above c?axis oriented YBa2Cu3O7?? thin films were prepared with Tc(R=0)=91.8 K and jc(77 K)=1.3×106 A/cm2 on (100)SrTiO3 substrates and Tc(R=0)=91.1 K and jc(77 K)=3×105 A/cm2 on (100)MgO substrates at B=0 T....A new carrier gas?free metalorganic chemical vapor deposition technique was developed yielding a high deposition rate. The ??dicetonate precursor compounds were synthesized with reproducible water content which is of great importance for their vapor pressure. With the technique described above c?axis oriented YBa2Cu3O7?? thin films were prepared with Tc(R=0)=91.8 K and jc(77 K)=1.3×106 A/cm2 on (100)SrTiO3 substrates and Tc(R=0)=91.1 K and jc(77 K)=3×105 A/cm2 on (100)MgO substrates at B=0 T. The influence of the metal composition on the formation of precipitation was studied by SEM investigations.» weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik
