Inhaltszusammenfassung

Results of the deposition of a-Si onto YBa2Cu3O7?x thin films are reported. The silicon was grown by plasma enhanced chemical vapour deposition at low substrate temperature (300°C). With this deposition process the critical temperature of the superconductor conductor remained almost constant but the critical current was reduced by nearly one order in magnitude. X-ray 2?-scans exhibited highly oriented films and SEM studies showed that the a-Si film smoothed the YBa2Cu3O7?x surface with no obs...Results of the deposition of a-Si onto YBa2Cu3O7?x thin films are reported. The silicon was grown by plasma enhanced chemical vapour deposition at low substrate temperature (300°C). With this deposition process the critical temperature of the superconductor conductor remained almost constant but the critical current was reduced by nearly one order in magnitude. X-ray 2?-scans exhibited highly oriented films and SEM studies showed that the a-Si film smoothed the YBa2Cu3O7?x surface with no observable crack formation. An interface layer with a maximum width of 30 nm was deduced from ESCA depth profiles. » weiterlesen» einklappen

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Klassifikation

DFG Fachgebiet:
Physik der kondensierten Materie

DDC Sachgruppe:
Physik