Biepitaxial Josephson junctions and SuFET technology for the preparation of HTS-JoFETs
Journal de physique 4. Bd. 4. H. C6. 1994 S. 205 - 210
Erscheinungsjahr: 1994
ISBN/ISSN: 1155-4339
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1051/jp4:1994633
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Inhaltszusammenfassung
Biepitaxial Josephson junctions and superconducting field effect transistors (SuFET) were fabricated in order to combine both techniques to a Josephson junction field effect transistor (JoFET). The Josephson junctions show RSJ-like behaviour. At 30 K a critical current density of Jc ? 104 A/cm2 and an IcRN-product of 0.1 mV were obtained. The oscillation of Shapiro steps with applied microwave field can be well fitted by the RSJ-model. SuFETs with CeO2 as dielectric show, for fixed charge tra...Biepitaxial Josephson junctions and superconducting field effect transistors (SuFET) were fabricated in order to combine both techniques to a Josephson junction field effect transistor (JoFET). The Josephson junctions show RSJ-like behaviour. At 30 K a critical current density of Jc ? 104 A/cm2 and an IcRN-product of 0.1 mV were obtained. The oscillation of Shapiro steps with applied microwave field can be well fitted by the RSJ-model. SuFETs with CeO2 as dielectric show, for fixed charge transfer, results comparable to SrTiO3-based SuFETs. The downset of the resistive transition of a six-unit-cells thick YBa2Cu3O7-? layer is 44 K and the largest field effect obtained so far is 1.5 %. Prelimary results on JoFETs show a drastic change in the critical current density and in the specific junction resistance, however the IcRN-product remains still in the typical range. The insulating properties are degraded compared to SuFETs. » weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik