A zone-casting technique for device fabrication of field-effect transistors based on discotic hexa-peri-hexabenzoeoronene
ADVANCED MATERIALS. Bd. 17. H. 6. WEINHEIM: WILEY-V C H VERLAG GMBH 2005 S. 684 - +
Erscheinungsjahr: 2005
ISBN/ISSN: 0935-9648
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1002/adma.200401171
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Inhaltszusammenfassung
Field-effect transistors with highly ordered active layers are fabricated by zone-casting discotic dodecyl-substituted hexa-peri-hexabenzocoronene molecules onto hydrophobic substrates to form semiconducting columnar structures (see Figure). The discs form columns that possess long-range order on the scale of square centimeters, and the devices show order-of-magnitude improvements in charge-carrier mobilities over previously reported devices.
Autoren
Pisula, W (Autor)
Menon, A (Autor)
Stepputat, M (Autor)
Lieberwirth, I (Autor)
Tracz, A (Autor)
Sirringhaus, H (Autor)
Pakula, T (Autor)
Mullen, K (Autor)