Thin films of YBa2Cu3O7−δ prepared by a new MO-CVD technique
Physica C. Bd. 185/189. H. 3. 1991 S. 2005 - 2006
Erscheinungsjahr: 1991
ISBN/ISSN: 0921-4534
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1016/0921-4534(91)91127-P
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Inhaltszusammenfassung
We report a new metalorganic chemical vapour-deposition technique (MO-CVD) for the preparation of thin films of YBa2Cu3O7?? (YBCO). The new technique directs the precursors from three individual sources without carrier gases to the substrate. Oxygen is supplied close to the substrate. The films grow epitaxially with high deposition rates (1?10?m/h) on single crystal (100) SrTiO3 and (100) MgO. At temperatures T=800°C a high degree of -axis orientation and excellent critical data are obtained...We report a new metalorganic chemical vapour-deposition technique (MO-CVD) for the preparation of thin films of YBa2Cu3O7?? (YBCO). The new technique directs the precursors from three individual sources without carrier gases to the substrate. Oxygen is supplied close to the substrate. The films grow epitaxially with high deposition rates (1?10?m/h) on single crystal (100) SrTiO3 and (100) MgO. At temperatures T=800°C a high degree of -axis orientation and excellent critical data are obtained. » weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik
