Surface morphology and electrical transport properties of YBa2Cu3O7 films on substrates relevant for technical application
Physica C. Bd. 185/189. H. 3. 1991 S. 2109 - 2110
Erscheinungsjahr: 1991
ISBN/ISSN: 0921-4534
Publikationstyp: Zeitschriftenaufsatz
Sprache: Englisch
Doi/URN: 10.1016/0921-4534(91)91179-8
Geprüft | Bibliothek |
Inhaltszusammenfassung
YBa2Cu3O7 films deposited on Al2O3 by laser ablation show c-axis oriented growth and critical temperatures Tc as high as 90 K. However the critical current density Jc is comparatively low. An improvement was achieved by using a ZrO2 intermediate layer which acts as a diffusion barrier. Bilayer YBa2Cu3O7/ZrO2 films prepared in-situ by laser ablation from a multi-target system under various conditions and with several buffer layer thicknesses exhibited Jc-values up to 5·105 A/cm2 at 77 K. The s...YBa2Cu3O7 films deposited on Al2O3 by laser ablation show c-axis oriented growth and critical temperatures Tc as high as 90 K. However the critical current density Jc is comparatively low. An improvement was achieved by using a ZrO2 intermediate layer which acts as a diffusion barrier. Bilayer YBa2Cu3O7/ZrO2 films prepared in-situ by laser ablation from a multi-target system under various conditions and with several buffer layer thicknesses exhibited Jc-values up to 5·105 A/cm2 at 77 K. The structure and the surfaces of the films were characterised by x-ray diffraction and scanning electron microscopy, respectively. The critical current density was measured as function of temperature, external magnetic field B, and relative orientation between B and the film surfaces. » weiterlesen» einklappen
Autoren
Klassifikation
DFG Fachgebiet:
Physik der kondensierten Materie
DDC Sachgruppe:
Physik